SPIE Advanced Lithography + Patterning 2025

An integration engineering approach to material design and development presented by James Lamb; Development of underlayers for MOR sensitivity improvement presented by Si Li (Elly)


San Jose, California

SPIE Advanced Lithography + Patterning 2025

An integration engineering approach to material design and development presented by James Lamb;
Development of underlayers for MOR sensitivity improvement presented by Si Li (Elly)

Event: SPIE Advanced Lithography + Patterning 2025

Location: San Jose, California

Conference Center: San Jose McEnery Convention Center

Keynote Presentation: An integration engineering approach to material design and development

Speaker: James E. Lamb III

Date: February 25, 2025

Time: 11:00 AM – 11:30 AM PST

Abstract: Coupled with pure image capture and transfer needs are an array of challenging requirements driven by new device architectures, new materials integration into device structures, as well as process flows and tooling. The primary premise of this work is that by broadening your perspective to account for previous and subsequent layers and the associated processes, more holistic product designs can be achieved with shorter and fewer design cycles. This presentation will cover the impact of the scaling challenges from the perspective of material providers and the critical impact on product development and quality manufacturing for sub-2-nm nodes.

Link to Agenda

Presentation: Development of underlayers for MOR sensitivity improvement

Speaker: Si Li (Elly)

Date: February 26, 2025

Time: 5:30 PM – 7:00 PM PST

Abstract: Underlayers have been acknowledged for their ability to improve photoresist performance by adjusting adhesion and compatibility. Here, a series of underlayers were designed to address MOR sensitivity. According to MOR mechanisms, reactive functional groups were introduced to facilitate the photoresist solubility switch at the interface of the photoresist and underlayer. Comprehensive analysis including GPC, stripping, contact angle, XPS, and SEM were conducted for a fundamental understanding of EUV LS lithography. The results indicate that MOR is sensitive to the functionalities in the underlayer and substrate.

Link to Agenda

 

 

An integration engineering approach to material design and development presented by James Lamb; Development of underlayers for MOR sensitivity improvement presented by Si Li (Elly) - SPIE Advanced Lithography + Patterning 2025

Back to Newsroom